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K4T1G084QF-BCE6

K4T1G084QF-BCE6

说明

        DRAM的消费者是专为消费电子设备,如数字电视,DVD播放机/录像机,机顶盒,数码摄像机,硬盘驱动器,打印机,存储和网络设备,汽车电器,和许多其他使用。DRAM是部署在几乎所有的高端数字消费电子和工业应用的今天,不同版本的DRAM的消费者,如在这类应用中使用的SDRAM,DDR DRAM,DDR2内存和DDR3 DRAM,事实上的内存。在消费DRAM市场的设备范围,是伴随着工业领域类似的范围。

        这种装置有能力承受更广泛的工作温度,电源电压波动。等先进功能, 数据组织,密度,数据率/针,带宽,连接接口,时钟和选通机制,电源电压,可用的软件包任何消费DRAM的一些关键特性。作为世界领先的供应商和内存技术的创新之一,三星电子已跻身第一,今天的消费和工业应用最广泛的产品组合,以提供最广泛的DRAM记忆体解决方案。三星消费DRAM是在不同的应用领域广泛,在商业和工业温度版本,容量和密度,正常,低功耗,以及超级低功耗运行模式的支持。

General Description

Consumer DRAM is designed specifically for use in consumer electronic devices, such as digital TVs, DVD players/recorders, set-top boxes, digital still and video cameras, hard disk drives, printers, storage and networking equipment, automotive appliances, and many others. DRAM is the de-facto memory deployed in virtually all high-end digital consumer and industrial applications in use today, with different versions of consumer DRAM, such as SDRAM, DDR DRAM, DDR2 DRAM, and DDR3 DRAM, being utilized in such applications. The range of devices in the consumer DRAM segment is accompanied by an analogous range for the industrial segment. Such devices have advanced features, such as capabilities to withstand much wider operating temperatures, and higher fluctuations in supply voltages. 
Data organization, density, data rate/pin, bandwidth, connection interfaces, clocking and strobing mechanisms, power supply voltages, and available packages are some of the key characteristics of any consumer DRAM. As one of the world’s leading suppliers and innovators in memory technology, Samsung has been among the first to provide the broadest range of DRAM memory solutions for the widest portfolio of today’s consumer and industrial applications. Samsung consumer DRAM is available in varying capacities and densities for an extensive range of application segments, in both commercial and industrial temperature versions, with support for Normal, Low Power, and Super Low Power operating modes.

 

Specifications/规格

Production Status Mass Production
Density 1Gb
Organization 128Mx8
Refresh 8K/64ms
Speed F8,E7,F7,E6
Power C,L,I,P
Bank/ Interface 8B/SSTL_1.8
Package 60FBGA

 

Features/参数

• JEDEC standard VDD = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is
an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at -40°C < TCASE < 95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x 8banks, 8Mbit
x 16 I/Os x 8 banks device. This synchronous device achieves high speed
double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general
applications.
The chip is designed to comply with the following key DDR2 SDRAM features
such as posted CAS with additive latency, write latency = read
latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the crosspoint of differential
clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. For example, 1Gb(x16)
device receive 13/10/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply
and 1.8V ± 0.1V VDDQ.
The 1Gb DDR2 device is available in 60ball FBGA(x8) and in 84ball
FBGA(x16).
NOTE : The functionality described and the timing specifications included in this data
sheet are for the DLL Enabled mode of operation.
NOTE : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing
Diagram”.

数据手册.pdf

K4T1G084QF - 数据表.pdf

 K4T51163QG-HCE7
K4T51083QG-HCE6
K4T51163QI-HIE7
K4T51163QI-HCF7
K4T1G164QE-HIE6
K4T1G084QE-HYE6  K4T1G084QE-HCF7 
K4T1G084QE-HCE7 K4T1G164QF-BCF8
K4T1G084QF-HCE6
K4T51083QI-HCE6 K4T51163QJ K4T51083QJ
K4T1G164QF-BCE6 K4T1G084QF-BCE6      

      上海银洋电子有限公司是一家经销ST意法半导体SAMSUNG微处理器和Dream音源DSP等国际知名半导体元器件,产品微控制器,DSP数字信号处理器,EEPROM非易失存储器,混合信号IC等等,主要产品涉及行业有电源、家电、PDA、音响功放、电话机、移动通讯、闪光灯、节能灯、电表、电脑及其周边设备、PDA、照相机、手机、太阳能等市场。

    上海银洋电子有限公司是一家集多家国际品牌的电子产品代理销售为一体的原厂授权代理商,负责在中国内地及香港市场的销售推广和技术支持工作,本公司位于上海科技京城,依托于原厂一级代理优势,立足于中国大陆。同时在深圳设立办事处,利用完善的服务网络建立强大的优势为客户介绍引进各类先进高科技电子元件,协助各厂家生产品质优良的产品并提供完善的服务。

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